Bulletin Data: Electronic device principles, P-N junction diodes, transistors, fabrication techniques. Bipolar and FET transistor biasing. Small signal parametric models for the bipolar and FET transistors. Prerequisite: Engineering Science 2003. Corequisite: Engineering Science 3063.
Textbook: Neaman, Electronic Circuit Analysis & Design, McGraw Hill Book Co. (1996)
Coordinator: Douglas Jussaume, Senior Instructor, Electrical Engineering
Course Objectives: The objective of this course is to develop the student’s analysis and design skills and techniques for electronic circuits using two and three terminal solid state devices. The students learn to design and analyze circuits with diodes, bipolar junction transistors and field effect transistors to establish bias and midband small signal gain performance.
Prerequisite: ES 2003
Corequisite: ES 3063
Topics:
Computer Usage: Frequent use of PSPICE to simulate circuit behavior. Program assignment to simulate device physics.
Format: Three (3) hours of Lecture per week.
Estimated ABET Category Content: Two (2) hours of Engineering Science. One (1) hour of Engineering Design.
Relationship to Program Outcomes:
Outcome a: Students use a basic knowledge of advanced mathematics and physics to understand common electronic components.
Outcome c: Students use this knowledge of components to synthesize circuits to provide a specific solution.
Outcome k: Students use PSPICE on out of class assignments.